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FCP20N60 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FCP20N60 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCP16N60 / FCPF16N60 Rev. A January 2007 SuperFETTM FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features •650V @TJ = 150°C • Typ. Rds(on)=0.22 • Ultra low gate charge (typ. Qg=45nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. TO-220 FCP Series G S D TO-220F FCPF Series G S D D G S Absolute Maximum Ratings Symbol Parameter FCP16N60 FCPF16N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25 C) - Continuous (TC = 100 C) 16 10.1 16* 10.1* A A IDM Drain Current - Pulsed (Note 1) 48 48* A VGSS Gate-Source voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) tbd mJ IAR Avalanche Current (Note 1) 16 A EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25 C) - Derate above 25 C 167 1.33 37.9 0.3 W W/ C TJ, TSTG Operating and Storage Temperature Range -55 to +150 C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 C Thermal Characteristics Symbol Parameter FCP16N60 FCPF16N60 Unit R JC Thermal Resistance, Junction-to-Case 0.75 3.3 C/W R JA Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W *Drain current limited by maximum junction temperature |
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