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TM2SN64EPU Datasheet(PDF) 10 Page - Texas Instruments |
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TM2SN64EPU Datasheet(HTML) 10 Page - Texas Instruments |
10 / 16 page TM2SN64EPU 2097152 BY 64-BIT TM4SN64EPU 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES SMMS681 – AUGUST 1997 10 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 serial presence detect The serial presence detect (SPD) is contained in a 2K-bit serial EEPROM located on the module. The SPD nonvolatile EEPROM contains various data such as module configuration, SDRAM organization, and timing parameters (see tables below). Only the first 128 bytes are programmed by Texas Instruments, while the remaining 128 bytes are available for customer use. Programming is done through a IIC bus using the clock (SCL) and data (SDA) signals. All Texas Instruments modules comply with the current JEDEC SPD Standard. See the Texas Instruments Serial Presence Detect Technical Reference (literature number SMMU001) for further details. Tables in this section list the SPD contents as follows: Table 1 –TM2SN64EPU Table 2 –TM4SN64EPU Table 1. Serial Presence-Detect Data for the TM2SN64EPU BYTE DESCRIPTION OF FUNCTION TM2SN64EPU-12A TM2SN64EPU-12 NO. DESCRIPTION OF FUNCTION ITEM DATA ITEM DATA 0 Defines number of bytes written into serial memory during module manufacturing 128 bytes 80h 128 bytes 80h 1 Total number of bytes of SPD memory device 256 bytes 08h 256 bytes 08h 2 Fundamental memory type (FPM, EDO, SDRAM, . . .) SDRAM 04h SDRAM 04h 3 Number of row addresses on this assembly 11 0Bh 11 0Bh 4 Number of column addresses on this assembly 9 09h 9 09h 5 Number of module banks on this assembly 1 bank 01h 1 bank 01h 6 Data width of this assembly 64 bits 40h 64 bits 40h 7 Data width continuation 00h 00h 8 Voltage interface standard of this assembly LVTTL 01h LVTTL 01h 9 SDRAM cycle time at maximum supported CAS latency (CL), CL = X tCK = 12 ns C0h tCK = 12 ns C0h 10 SDRAM access from clock at CL = X tAC = 9 ns 90h tAC = 9 ns 90h 11 DIMM configuration type (non-parity, parity, error correcting code [ECC]) Non-Parity 00h Non-Parity 00h 12 Refresh rate / type 15.6 µs/ self-refresh 80h 15.6 µs/ self-refresh 80h 13 SDRAM width, primary DRAM x8 08h x8 08h 14 Error-checking SDRAM data width N/A 00h N/A 00h 15 Minimum clock delay, back-to-back random column addresses 1 CK cycle 01h 1 CK cycle 01h 16 Burst lengths supported 1, 2, 4, 8 0Fh 1, 2, 4, 8 0Fh 17 Number of banks on each SDRAM device 2 banks 02h 2 banks 02h 18 CAS latencies supported 2, 3 06h 2, 3 06h 19 CS latency 0 01h 0 01h 20 Write latency 0 01h 0 01h 21 SDRAM module attributes Non-buffered/ Non-registered 00h Non-buffered/ Non-registered 00h |
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