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CM100DY-12H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # CM100DY-12H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
Download  4 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM100DY-12H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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Sep.1998
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
OUTPUT CHARACTERISTICS
(TYPICAL)
200
02468
10
150
50
0
VGE = 20V
15
12
11
8
7
Tj = 25
oC
100
10
9
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
200
0
4
8
12
16
20
150
100
50
0
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
50
100
150
200
4
3
2
1
0
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
Tj = 25°C
IC = 40A
IC = 200A
IC = 100A
0
0.8
1.6
2.4
3.2
4.0
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
103
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE VS. VCE
(TYPICAL)
10-1
100
102
102
101
100
10-1
VGE = 0V
101
Cies
Coes
Cres
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
GATE CHARGE, QG, (nC)
GATE CHARGE, VGE
20
0
100
200
300
400
16
12
8
4
0
VCC = 200V
IC = 100A
500
VCC = 300V
101
103
7
5
3
2
100
23
5 7
101
102
7
5
3
2
23
5 7
102
td(off)
VCC = 300V
VGE = ±15V
RG = 6.3
Ω
Tj = 125°C
td(on)
tf
tr
101
103
7
5
3
2
100
23
5 7
101
102
7
5
3
2
23
5 7
102
100
102
7
5
3
2
101
7
5
3
2
–di/dt = 200A/
µs
Tj = 25°C
trr
lrr
MITSUBISHI IGBT MODULES
CM100DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE


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