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TSM55N03CP Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM55N03CP Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 3 page TSM55N03 1-3 2005/04 rev. B TSM55N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V ID = 55A RDS (on), Vgs @ 10V, Ids @ 30A = 6mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 9mΩ Features Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Improved Shoot-Through FOM Fully Characterized Avalanche Voltage and Current Specially Designed for DC/DC Converters and Motor Drivers Block Diagram Ordering Information Part No. Packing Package TSM55N03CP Tape & Reel TO-252 Absolute Maximum Rating (T A = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 55 Pulsed Drain Current IDM 350 A TA = 25 oC 70 W Maximum Power Dissipation TA = 75 oC PD 42 W/ oC Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω) EAS 300 mJ Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8” from case) TL 10 S Junction-to-case Thermal Resistance Rθjc 1.8 Junction to Ambient Thermal Resistance (PCB mounted) Rθja 40 oC/W Note: 1. Maximum DC current limited by the package 2. 1-in 2 2oz Cu PCB board Pin assignment: 1. Gate 2. Drain 3. Source |
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