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MC9S08PT16 Datasheet(PDF) 17 Page - NXP Semiconductors

Part # MC9S08PT16
Description  8-Bit S08 central processor unit (CPU)
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MC9S08PT16 Datasheet(HTML) 17 Page - NXP Semiconductors

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6.1.3 EMC performance
Electromagnetic compatibility (EMC) performance is highly dependent on the
environment in which the MCU resides. Board design and layout, circuit topology
choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should
consult NXP applications notes such as AN2321, AN1050, AN1263, AN2764, and
AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
6.1.3.1 EMC radiated emissions operating behaviors
Table 6. EMC radiated emissions operating behaviors for 44-pin LQFP package
Symbol
Description
Frequency
band (MHz)
Typ.
Unit
Notes
VRE1
Radiated emissions voltage, band 1
0.15–50
8
dBμV
1, 2
VRE2
Radiated emissions voltage, band 2
50–150
8
dBμV
VRE3
Radiated emissions voltage, band 3
150–500
8
dBμV
VRE4
Radiated emissions voltage, band 4
500–1000
5
dBμV
VRE_IEC
IEC level
0.15–1000
N
2, 3
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150
kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits - Measurement of
Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method. Measurements were made while the microcontroller was running basic application code. The reported
emission level is the value of the maximum measured emission, rounded up to the next whole number, from among the
measured orientations in each frequency range.
2. VDD = 5.0 V, TA = 25 °C, fOSC = 10 MHz (crystal), fSYS = 20 MHz, fBUS = 20 MHz
3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method
Switching specifications
6.2.1 Control timing
Table 7. Control timing
Num
C
Rating
Symbol
Min
Typical1
Max
Unit
1
P
Bus frequency (tcyc = 1/fBus)
fBus
DC
20
MHz
2
C
Internal low power oscillator frequency
fLPO
1.0
KHz
3
D
External reset pulse width2
textrst
1.5 ×
tcyc
ns
4
D
Reset low drive
trstdrv
34 × tcyc
ns
Table continues on the next page...
6.2
Switching specifications
MC9S08PT16 Series Data Sheet, Rev. 4, 03/2020
NXP Semiconductors
17


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