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MC9S08PT16 Datasheet(PDF) 17 Page - NXP Semiconductors |
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MC9S08PT16 Datasheet(HTML) 17 Page - NXP Semiconductors |
17 / 37 page 6.1.3 EMC performance Electromagnetic compatibility (EMC) performance is highly dependent on the environment in which the MCU resides. Board design and layout, circuit topology choices, location and characteristics of external components as well as MCU software operation all play a significant role in EMC performance. The system designer should consult NXP applications notes such as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance. 6.1.3.1 EMC radiated emissions operating behaviors Table 6. EMC radiated emissions operating behaviors for 44-pin LQFP package Symbol Description Frequency band (MHz) Typ. Unit Notes VRE1 Radiated emissions voltage, band 1 0.15–50 8 dBμV 1, 2 VRE2 Radiated emissions voltage, band 2 50–150 8 dBμV VRE3 Radiated emissions voltage, band 3 150–500 8 dBμV VRE4 Radiated emissions voltage, band 4 500–1000 5 dBμV VRE_IEC IEC level 0.15–1000 N — 2, 3 1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150 kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits - Measurement of Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and Wideband TEM Cell Method. Measurements were made while the microcontroller was running basic application code. The reported emission level is the value of the maximum measured emission, rounded up to the next whole number, from among the measured orientations in each frequency range. 2. VDD = 5.0 V, TA = 25 °C, fOSC = 10 MHz (crystal), fSYS = 20 MHz, fBUS = 20 MHz 3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband TEM Cell Method Switching specifications 6.2.1 Control timing Table 7. Control timing Num C Rating Symbol Min Typical1 Max Unit 1 P Bus frequency (tcyc = 1/fBus) fBus DC — 20 MHz 2 C Internal low power oscillator frequency fLPO — 1.0 — KHz 3 D External reset pulse width2 textrst 1.5 × tcyc — — ns 4 D Reset low drive trstdrv 34 × tcyc — — ns Table continues on the next page... 6.2 Switching specifications MC9S08PT16 Series Data Sheet, Rev. 4, 03/2020 NXP Semiconductors 17 |
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