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TSC2059CX Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC2059CX Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 2 page TSC2059 1-1 2004/06 rev. A TSC2059 General Purpose NPN Transistor BVCEO = 40V Ic = 50mA VCE (SAT), = 0.2V(typ.) @Ic / Ib = 500mA / 50mA Features High transition frequency Very low capacitance Small rbb’-Cc and high gain Small NF. Ordering Information Part No. Packing Package Marking TSC2059CX 3kpcs / Reel SOT-23 3E Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 18V V Collector-Emitter Voltage VCEO 25V V Emitter-Base Voltage VEBO 3 V Collector Current IC 50 mA Collector Power Dissipation PD 225 mW Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Electrical Characteristics Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 10uA, IE = 0 BVCBO 25 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 18 -- -- V Emitter-Base Breakdown Voltage IE = 10uA, IC = 0 BVEBO 3 -- -- V Collector Cutoff Current VCB = 10V, IE = 0 ICBO -- -- 0.5 uA Emitter Cutoff Current VEB = 2V, IC = 0 IEBO -- -- 0.5 uA Collector-Emitter Saturation Voltage IC / IB = 20mA / 4mA VCE(SAT)1 -- -- 0.5 V DC Current Transfer Ratio VCE = 10V, IC = 10mA hFE 52 -- 270 Transition Frequency VCE = 10V, IC= 10mA, f=200MHz fT -- 1000 -- MHz Output Capacitance VCB = 10V, f=1MHz Cob -- 1.4 2.0 pF VCB = 10V, IC= 10mA, f=31.8MHz Rbb’-Cc -- 8 15 pF VCE = 12V, IC= 2mA, f=200MHz, Rg=50ohm NF -- 5.5 -- dB Note : pulse test: pulse width <=380uS, duty cycle <=2% Classification Of hFE Rank K P Q Range 52 - 120 82 - 180 120 - 270 Pin assignment: 1. Base 2. Emitter 3. Collector |
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