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AM29LV800D Datasheet(PDF) 4 Page - Advanced Micro Devices

Part No. AM29LV800D
Description  8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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Maker  AMD [Advanced Micro Devices]
Homepage  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV800D Datasheet(HTML) 4 Page - Advanced Micro Devices

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Am29LV800D_00_A4_E January 21, 2005
General Description
The Am29LV800D is an 8 Mbit, 3.0 volt-only
Flash memory organized as 1,048,576 bytes or
524,288 words. The device is offered in 48-ball
FBGA, 44-pin SO, and 48-pin TSOP packages.
For more information, refer to publication
number 21536. The word-wide data (x16)
appears on DQ15–DQ0; the byte-wide (x8) data
appears on DQ7–DQ0. This device requires only
a single, 3.0 volt VCC supply to perform read,
program, and erase operations. A standard
EPROM programmer can also be used to program
and erase the device.
This device is manufactured using AMD’s 0.23
µm process technology, and offers all the fea-
tures and benefits of the Am29LV800B, which
was manufactured using 0.32 µm process tech-
The standard device offers access times of 70,
90, and 120 ns, allowing high speed micropro-
cessors to operate without wait states. To elim-
inate bus contention the device has separate
chip enable (CE#), write enable (WE#) and
output enable (OE#) controls.
The device requires only a single 3.0 volt
power supply for both read and write func-
tions. Internally generated and regulated volt-
ages are provided for the program and erase
The device is entirely command set compatible
with the JEDEC single-power-supply Flash
standard. Commands are written to the
command register using standard micropro-
cessor write timings. Register contents serve as
input to an internal state-machine that controls
the erase and programming circuitry. Write
cycles also internally latch addresses and data
needed for the programming and erase opera-
tions. Reading data out of the device is similar
to reading from other Flash or EPROM devices.
Device programming occurs by executing the
program command sequence. This initiates the
Embedded Program algorithm—an internal
algorithm that automatically times the program
pulse widths and verifies proper cell margin. The
Unlock Bypass mode facilitates faster pro-
gramming times by requiring only two write
cycles to program data instead of four.
Device erasure occurs by executing the erase
co mm a n d s e que n ce. T h is i n it ia t e s t h e
Embedded Erase algorithm—an internal algo-
rithm that automatically preprograms the array
(if it is not already programmed) before exe-
cuting the erase operation. During erase, the
device automatically times the erase pulse
widths and verifies proper cell margin.
The host system can detect whether a program
or erase operation is complete by observing the
RY/BY# pin, or by reading the DQ7 (Data#
Polling) and DQ6 (toggle) status bits. After a
program or erase cycle has been completed, the
device is ready to read array data or accept
another command.
The sector erase architecture allows memory
sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The
device is fully erased when shipped from the
Hardware data protection measures include
a low VCC detector that automatically inhibits
write operations during power transitions. The
hardware sector protection feature disables
both program and erase operations in any com-
bination of the sectors of memory. This can be
achieved in-system or via programming equip-
The Erase Suspend feature enables the user to
put erase on hold for any period of time to read
data from, or program data to, any sector that
is not selected for erasure. True background
erase can thus be achieved.
The hardware RESET# pin terminates any
operation in progress and resets the internal
state machine to reading array data. The
RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the
device, enabling the system microprocessor to
read the boot-up firmware from the Flash
The device offers two power-saving features.
When addresses have been stable for a specified
amount of time, the device enters the auto-
matic sleep mode. The system can also place
the device into the standby mode. Power con-
sumption is greatly reduced in both these
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce
the highest levels of quality, reliability and cost
effectiveness. The device electrically erases
all bits within a sector simultaneously via
Fowler-Nordheim tunneling. The data is pro-
grammed using hot electron injection.

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