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FPD10000V Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors

Part No. FPD10000V
Description  10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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FPD10000V Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors

   
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PRELIMINARY
FPD10000V
10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS
Phone: +1 408 850-5790
http:/www.filtronic.co.uk/semis
Revised: 8/5/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
PERFORMANCE (3.5 GHz)
(802.16-2004 WiMAX Modulation)
♦ 30 dBm Output Power, < 2.5% EVM
♦ 9.5 dB Power Gain
♦ Class AB Efficiency 10% (10V / 1A IDQ)
♦ Class B Efficiency 18% (8V / 300 mA IDQ)
♦ 39 dBm CW Output Power
♦ > 48 dBm 3rd Order Intercept Point
♦ Plated Source Vias – No Source wirebonds needed
♦ 2.5 and 3.5 GHz Evaluation boards available (packaged device)
DESCRIPTION AND APPLICATIONS
The FPD10000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers.
The device can be biased from Class C (IDQ < 200 mA), to Class A (IDQ = 1.0 – 1.5 A) to deliver
optimal linear power over the desired output power range. The FPD10000V is also available in
packaged form.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT f = 3.5 GHz
Power at 1dB Gain Compression
CW Single Tone
P1dB
VDS = 10V; IDQ = 1.0 A
ΓS and ΓL tuned for Optimum IP3
39.5
dBm
Power Gain at dB Gain Compression
CW Single Tone
G1dB
VDS = 10V; IDQ = 1.0 A
Class AB Mode
9.5
dB
Channel Power with 802.16-2004
2.5% max. EVM
PCH
Class AB Mode
VDS = 10 V; IDQ = 1.0 A
31.0
31.5
dBm
Channel Power with 802.16-2004
2.5% max. EVM
PCH
Class B Mode
VDS = 8 V; IDQ = 350 mA typ.
29.5
30
dBm
Power-Added Efficiency
802.16-2004 modulation
Eff
Class AB Mode
Class B Mode
10
20
%
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
5.2
A
Gate-Source Leakage Current
IGSO
VGS = -3 V
3
mA
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 19 mA
1.1
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 19 mA
30
35
V
Thermal Resistivity
ΘCC
See Note on following page
3.5
°C/W
GATE
BOND PAD
(16X)
DIE SIZE (
µm): 3750 x 750
DIE THICKNESS: 50
µm
BONDING PADS (
µm): >70 x 60
SEE BONDING DIAGRAM BELOW
DRAIN
BOND PAD
(16X)


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