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FPD10000V Datasheet(PDF) 3 Page - Filtronic Compound Semiconductors |
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FPD10000V Datasheet(HTML) 3 Page - Filtronic Compound Semiconductors |
3 / 3 page PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS Phone: +1 408 850-5790 http:/www.filtronic.co.uk/semis Revised: 8/5/05 Fax: +1 408 850-5766 Email: sales@filcsi.com • APPLICATIONS NOTES & DESIGN DATA Recommendations on matching circuits is available from your local Filtronic Sales Representative or directly from the factory. User must ensure that proper bias sequencing is observed: Gate bias must be applied before Drain bias, and during power-down the Drain bias must be removed first. • BONDING / ASSEMBLY DIAGRAM Notes: 25 µm (0.001 in.) gold wire is recommended. No Source wire bonds are needed, device features Source thru-vias. 16 bonds each side, Gate and Drain. User must ensure that the die attach material is uniform and free of voiding underneath the die to ensure proper thermal heatsinking. A useful guideline is a 0.001 – 0.002 in. (0.025 – 0.050 mm) fillet of die attach material all around the periphery of the die. All information and specifications are subject to change without notice. |
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Similar Description - FPD10000V |
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