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FPD6836SOT343 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors

Part No. FPD6836SOT343
Description  LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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FPD6836SOT343 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors

   
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PRELIMINARY
FPD6836SOT343
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 09/15/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
PERFORMANCE (1850 MHz)
♦ 0.5 dB Noise Figure
♦ 20 dBm Output Power (P1dB)
♦ 20 dB Small-Signal Gain (SSG)
♦ 32 dBm Output IP3
♦ Evaluation Boards Available
DESCRIPTION AND APPLICATIONS
The FPD6836SOT343 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25
µm x 360 µm Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD6836 is available in die form and in other
packages.
Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-
point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
Minimum Noise Figure
NF
VDS = 3.0 V; IDS = 50% IDSS
VDS = 3.0 V; IDS = 25% IDSS
0.5
0.4
0.9
dB
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
IP3
VDS = 3.0 V; IDS = 50% IDSS
VDS = 3.0 V; IDS = 25% IDSS
Tuned for Optimum IP3
32
30
dBm
Small-Signal Gain
SSG
VDS = 3.0 V; IDS = 50% IDSS
VDS = 3.0 V; IDS = 25% IDSS
18
20
18
dB
Power at 1dB Gain Compression
P1dB
VDS = 3.0 V; IDS = 50% IDSS
VDS = 3.0 V; IDS = 25% IDSS
18
20
18
dBm
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
90
135
mA
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
200
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
100
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
1
10
µA
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 0.75 mA
0.7
1.0
1.3
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.75 mA
12
18
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.75 mA
12
18
V


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