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MJ11028 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MJ11028
Description  COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MJ11028 Datasheet(HTML) 2 Page - ON Semiconductor

   
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MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
MJ11028, MJ11029
(IC = 1 00 mAdc, IB = 0)
MJ11030, MJ11031
MJ11032, MJ11033
V(BR)CEO
60
90
120
Vdc
Collector–Emitter Leakage Current
(VCE = 60 Vdc, RBE = 1 k ohm)
MJ11028, MJ11029
(VCE = 90 Vdc, RBE = 1 k ohm)
MJ11030, MJ11031
(VCE = 120 Vdc, RBE = 1 k ohm)
MJ11032, MJ11033
(VCE = 60 Vdc, RBE = 1 k ohm, TC = 150_C)
MJ11028, MJ11029
(VCE = 90 Vdc, RBE = 1 k ohm, TC = 150_C)
MJ11030, MJ11031
(VCE = 120 Vdc, RBE = 1 k ohm, TC = 150_C)
MJ11032, MJ11033
ICER
2
2
2
10
10
10
mAdc
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
5
mAdc
Collector–Emitter Leakage Current (VCE = 50 Vdc, IB = 0)
ICEO
2
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 25 Adc, VCE = 5 Vdc)
(IC = 50 Adc, VCE = 5 Vdc)
hFE
1 k
400
18 k
Collector–Emitter Saturation Voltage
(IC = 25 Adc, IB = 250 mAdc)
(IC = 50 Adc, IB = 500 mAdc)
VCE(sat)
2.5
3.5
Vdc
Base–Emitter Saturation Voltage
(IC = 25 Adc, IB = 200 mAdc)
(IC = 50 Adc, IB = 300 mAdc)
VBE(sat)
3.0
4.5
Vdc
(1) Pulse Test: Pulse Width
v 300 µs, Duty Cycle v 2.0%.
100
0.2
Figure 2. DC Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
0.5
1
2
5
10
20
50
200
20
10
5
50
2
1
0.5
0.2
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
MJ11028, 29
MJ11030, 31
MJ11032, 33
100
There are two limitations on the power–handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by se-
cond breakdown.
IC, COLLECTOR CURRENT (AMP)
100 k
IC, COLLECTOR CURRENT (AMP)
50 k
20 k
10 k
5 k
2 k
500
Figure 3. DC Current Gain
1
2
5
10
100
20
50
Figure 4. “On” Voltage
100
VCE = 5 V
TJ = 25°C
1 k
200
MJ11029, MJ11031, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
5
4
3
2
1
1
2
5
10
100
20
50
0
3
TJ = 25°C
IC/IB = 100
VBE(sat)
80
µs
(PULSED)
MJ11029, MJ11031, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
80
µs
(PULSED)
VCE(sat)


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