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FPD3000SOT89 Datasheet(PDF) 4 Page - Filtronic Compound Semiconductors

Part No. FPD3000SOT89
Description  LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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Manufacturer  FILTRONIC [Filtronic Compound Semiconductors]
Direct Link  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FPD3000SOT89 Datasheet(HTML) 4 Page - Filtronic Compound Semiconductors

  FPD3000SOT89 Datasheet HTML 1Page - Filtronic Compound Semiconductors FPD3000SOT89 Datasheet HTML 2Page - Filtronic Compound Semiconductors FPD3000SOT89 Datasheet HTML 3Page - Filtronic Compound Semiconductors FPD3000SOT89 Datasheet HTML 4Page - Filtronic Compound Semiconductors FPD3000SOT89 Datasheet HTML 5Page - Filtronic Compound Semiconductors FPD3000SOT89 Datasheet HTML 6Page - Filtronic Compound Semiconductors FPD3000SOT89 Datasheet HTML 7Page - Filtronic Compound Semiconductors FPD3000SOT89 Datasheet HTML 8Page - Filtronic Compound Semiconductors  
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FPD3000SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
Phone: +1 408 850-5790
http:// www.filtronic.co.uk/semis
Revised: 01/05/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
TYPICAL TUNED RF PERFORMANCE
Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS
= 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output
tuning) for maximum output power at 1dB gain compression.
Power Transfer Characteristic
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
31.0
32.0
11.0
13.0
15.0
17.0
19.0
21.0
23.0
Input Power (dBm)
-0.75
-0.25
0.25
0.75
1.25
1.75
2.25
2.75
3.25
Pout (dBm)
Comp Point
Drain Efficiency and PAE
0%
5%
10%
15%
20%
25%
30%
35%
40%
45%
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
Input Power (dBm)
0%
5%
10%
15%
20%
25%
30%
35%
40%
45%
PAE
Eff.


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