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FPD2250SOT89 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors

Part No. FPD2250SOT89
Description  LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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FPD2250SOT89 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors

   
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FPD2250SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 01/05/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
PERFORMANCE (1850 MHz)
♦ 29 dBm Output Power (P1dB)
♦ 14 dB Small-Signal Gain (SSG)
♦ 1.0 dB Noise Figure
♦ 44 dBm Output IP3
♦ 50% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Available in Lead Free Finish: FPD2250SOT89E
DESCRIPTION AND APPLICATIONS
The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25
µm x 2250 µm Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD2250 is available in die form and in other
packages.
Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-
point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
Power at 1dB Gain Compression
P1dB
VDS = 5 V; IDS = 50% IDSS
28
29
dBm
Small-Signal Gain
SSG
VDS = 5 V; IDS = 50% IDSS
12
14
dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
50
%
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
1.0
0.8
1.2
dB
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
IP3
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
43
44
dBm
Saturated Drain-Source Current
IDSS
VDS = 2 V; VGS = 0 V
560
700
825
mA
Maximum Drain-Source Current
IMAX
VDS = 2 V; VGS ≅ +1 V
1.1
A
Transconductance
GM
VDS = 2 V; VGS = 0 V
600
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
1
10
µA
Pinch-Off Voltage
|VP|
VDS = 2 V; IDS = 2.25 mA
0.7
1.0
1.3
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 2.25 mA
12
16
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 2.25 mA
12
18
V


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