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FPD2250SOT89 Datasheet(PDF) 4 Page - Filtronic Compound Semiconductors

Part No. FPD2250SOT89
Description  LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
Download  8 Pages
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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FPD2250SOT89 Datasheet(HTML) 4 Page - Filtronic Compound Semiconductors

   
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FPD2250SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 01/05/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
TYPICAL TUNED RF PERFORMANCE
Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS
= 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output
tuning) for maximum output power at 1dB gain compression.
Power Transfer Characteristric
VDS = 5V IDS = 50% IDSS at f = 1.85 GHz
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
9
1113151719
Input Power (dBm)
-0.75
-0.25
0.25
0.75
1.25
1.75
2.25
2.75
3.25
3.75
Pout (dBm)
Comp Point
Drain Efficiency and PAE
VDS = 5V IDS = 50% IDSS at f = 1.85 GHz
5.0%
15.0%
25.0%
35.0%
45.0%
55.0%
65.0%
9
11
131517
19
Input Power (dBm)
5.0%
15.0%
25.0%
35.0%
45.0%
55.0%
65.0%
PAE
Eff.


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