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FPD1500SOT89 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors

Part No. FPD1500SOT89
Description  LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
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Manufacturer  FILTRONIC [Filtronic Compound Semiconductors]
Direct Link  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FPD1500SOT89 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors

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FPD1500SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised11/11/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
PERFORMANCE (1850 MHz)
♦ 27.5 dBm Output Power (P1dB)
♦ 17 dB Small-Signal Gain (SSG)
♦ 1.2 dB Noise Figure
♦ 42 dBm Output IP3
♦ 50% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Available in Lead Free Finish: FPD1500SOT89E
DESCRIPTION AND APPLICATIONS
The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 x 1500
μm Schottky barrier Gate, defined by high-
resolution stepper-based photolithography.
The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD1500 is available in die form and in other
packages. Typical applications include drivers or output stages in PCS/Cellular base station high-
intercept-point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
Power at 1dB Gain Compression
P1dB
VDS = 5.0V; IDS = 50% IDSS
26.0
27.5
dBm
Small-Signal Gain
SSG
VDS = 5.0V; IDS = 50% IDSS
15.5
17
dB
Power-Added Efficiency
POUT = P1dB
PAE
VDS = 5.0V; IDS = 50% IDSS
50
%
Noise Figure
NF
VDS = 5.0V; IDS = 50% IDSS
1.2
1.5
dB
VDS = 5.0V; IDS = 50% IDSS
Matched for best P1dB
38
40
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
IP3
Matched for best IP3 at 50% IDSS
42
dBm
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
375
465
550
mA
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
750
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
400
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
1
15
μA
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 1.5 mA
0.7
1.0
1.3
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 1.5 mA
12
16
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 1.5 mA
12
16
V


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