FPD1500P100

Phone: +1 408 850-5790

http://www.filtronic.co.uk/semis

Released: 6/27/05

Fax: +1 408 850-5766

Email: sales@filcsi.com

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FEATURES

♦ 29.5 dBm Linear Output Power

♦ 18 dB Power Gain at 2 GHz

♦ 10.5 dB Maximum Stable Gain at 10 GHz

♦ 39 dBm Output IP3

♦ 45% Power-Added Efficiency at 2 GHz

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DESCRIPTION AND APPLICATIONS

The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility

Transistor (PHEMT), featuring a 0.25

µm by 1500 µm Schottky barrier gate, defined by high-

resolution stepper-based photolithography. The recessed and offset Gate structure minimizes

parasitics to optimize performance. The epitaxial structure and processing have been optimized for

available in die form and in the low cost plastic SOT89 and DFN plastic packages.

Typical applications include commercial and other narrowband and broadband high-performance

amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output

amplifiers, and medium-haul digital radio transmitters.

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ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

UNLESS OTHERWISE NOTED, RF SPECIFICATIONS MEASURED AT f = 2 GHz USING CW SIGNAL

Power at 1dB Gain Compression

28.0

29.5

dBm

17.5

18.0

dB

SSG

f = 2 GHz

f = 10 GHz

21.5

9.5

22.0

10.5

dB

dB

Power-Added Efficiency

PAE

45

%

Output Third-Order Intercept Point

IP3

Matched for optimal power

39

dBm

Saturated Drain-Source Current

375

465

550

mA

Maximum Drain-Source Current

750

mA

Transconductance

400

mS

Gate-Source Leakage Current

1

15

µA

Pinch-Off Voltage

0.7

1.0

1.3

V

Gate-Drain Breakdown Voltage

14.5

16.0

V

Thermal Resistivity (see Notes)

48

°C/W