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FPD750SOT89 Datasheet(PDF) 4 Page - Filtronic Compound Semiconductors

Part No. FPD750SOT89
Description  LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
Download  8 Pages
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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FPD750SOT89 Datasheet(HTML) 4 Page - Filtronic Compound Semiconductors

   
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FPD750SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 01/05/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
TYPICAL TUNED RF PERFORMANCE
Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS
= 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output
tuning) for maximum output power at 1dB gain compression.
Power Transfer Characteristic
VDS = 5V IDS = 50% IDSS at f = 1.85 GHz
22.0
22.5
23.0
23.5
24.0
24.5
25.0
25.5
26.0
456
789
10
11
12
Input Power (dBm)
-0.50
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
Pout (dBm)
Comp Point
Drain Efficiency and PAE
10.0%
20.0%
30.0%
40.0%
50.0%
60.0%
13
5
7
9
11
Input Power (dBm)
10.0%
20.0%
30.0%
40.0%
50.0%
60.0%
PAE
Eff.


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