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FPD750DFN Datasheet(PDF) 2 Page - Filtronic Compound Semiconductors

Part No. FPD750DFN
Description  LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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FPD750DFN Datasheet(HTML) 2 Page - Filtronic Compound Semiconductors

   
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FPD750DFN
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 11/14/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
ABSOLUTE MAXIMUM RATINGS1
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
VDS
-3V < VGS < +0V
8
V
Gate-Source Voltage
VGS
0V < VDS < +8V
-3
V
Drain-Source Current
IDS
For VDS > 2V
IDSS
mA
Gate Current
IG
Forward or reverse current
7.5
mA
RF Input Power
2
PIN
Under any acceptable bias state
175
mW
Channel Operating Temperature
TCH
Under any acceptable bias state
175
ºC
Storage Temperature
TSTG
Non-Operating Storage
-40
150
ºC
Total Power Dissipation
PTOT
See De-Rating Note below
1.50
W
Gain Compression
Comp.
Under any bias conditions
5
dB
Simultaneous Combination of Limits
3
2 or more Max. Limits
80
%
1T
Ambient = 22°C unless otherwise noted
2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where:
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22
°C:
PTOT= 1.50W – (0.011W/°C) x TPACK
where TPACK = source tab lead temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 65
°C source lead temperature: P
TOT = 1.50W – (0.011 x (65 – 22)) = 1.03W
The use of a filled via-hole directly beneath the exposed heatsink tab on the bottom of the package is strongly
recommended to provide for adequate thermal management.
Ideally the bottom of the circuit board is
affixed to a heatsink or thermal radiator
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory.
Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site. Evaluation Boards available upon request.


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