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FPD750DFN Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors

Part No. FPD750DFN
Description  LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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FPD750DFN Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors

   
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FPD750DFN
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
PERFORMANCE (1850 MHz)
♦ 24 dBm Output Power (P
1dB)
♦ 20 dB Small-Signal Gain (SSG)
♦ 0.3 dB Noise Figure at 25% Bias
♦ 39 dBm Output IP3 at 50% Bias
♦ 45% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Featuring Lead Free Finish Package
DESCRIPTION AND APPLICATIONS
The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25
μm x 750 μm Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD750DFN is available in die form and in
other packages.
Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-
point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
Power at 1dB Gain Compression
P1dB
VDS = 5 V; IDS = 50% IDSS
22.5
24
dBm
Small-Signal Gain
SSG
VDS = 5 V; IDS = 50% IDSS
19
20
dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
45
%
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
0.7
0.3
1.1
0.9
dB
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
IP3
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
37
39
dBm
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
180
230
280
mA
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
375
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
200
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
1
15
μA
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 0.75 mA
0.7
1.0
1.3
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.75 mA
12
16
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.75 mA
12
16
V
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 11/14/05
Fax: +1 408 850-5766
Email: sales@filcsi.com


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