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FPD750DFN Datasheet(PDF) 5 Page - Filtronic Compound Semiconductors

Part No. FPD750DFN
Description  LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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FPD750DFN Datasheet(HTML) 5 Page - Filtronic Compound Semiconductors

   
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FPD750DFN
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 11/14/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source
voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which
would normally distort the current measurement (this effect has been filtered from the I-V curves
presented above). Setting the VDS > 1.3V will generally cause errors in the current measurements,
even in stabilized circuits.
Recommendation: Traditionally a device’s IDSS rating (IDS at VGS = 0V) was used as a predictor of
RF power, and for MESFETs there is a correlation between IDSS and P1dB (power at 1dB gain
compression).
For pHEMTs it can be shown that there is no meaningful statistical correlation
between IDSS and P1dB; specifically a linear regression analysis shows r
2 < 0.7, and the regression
fails the F-statistic test. IDSS is sometimes useful as a guide to circuit tuning, since the S22 does vary
with the quiescent operating point IDS.


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