PRELIMINARY

FPD200P70

Phone: +1 408 850-5790

http://www.filtrionic.co.uk/semis

Revised: 7/15/05

Fax: +1 408 850-5766

Email: sales@filcsi.com

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PERFORMANCE

♦ 0.7 dB Noise Figure at 1.85 GHz

♦ 30 dBm Output IP3

♦ 50% Power-Added Efficiency at 1.85 GHz

♦ Useable Gain to 26 GHz

♦ Evaluation Boards Available

GATE LEAD IS ANGLED

•

DESCRIPTION AND APPLICATIONS

Mobility Transistor (pHEMT). It utilizes a 0.25

Typical applications include gain blocks and medium power stages for applications to 26 GHz.

•

ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL (except as noted)

Power at 1dB Gain Compression

20

dBm

Gain at 1dB Gain Compression

SSG

21

dB

Power-Added Efficiency

PAE

45

%

f = 12 GHz

f = 18 GHz

MSG

15

11

Noise Figure

NF

0.7

dB

Output Third-Order Intercept Point

IP3

30

dBm

Saturated Drain-Source Current

45

60

75

mA

Maximum Drain-Source Current

120

mA

Transconductance

80

mS

Gate-Source Leakage Current

1

10

µA

Pinch-Off Voltage

0.7

0.9

1.3

V

Gate-Source Breakdown Voltage

12

14

V

Gate-Drain Breakdown Voltage

14.5

16

V

Thermal Resistivity (see Notes)

325

°C/W