MJ10020 MJ10021

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (Table 1)

MJ10020

(IC = 100 mA, IB = 0)

MJ10021

VCEO(sus)

200

250

—

—

—

—

Vdc

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)

ICEV

—

—

—

—

0.25

5.0

mAdc

Collector Cutoff Current

(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)

ICER

—

—

5.0

mAdc

Emitter Cutoff Current

(VEB = 2.0 V, IC = 0)

IEBO

—

—

175

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

IS/b

See Figure 13

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 14

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 15 Adc, VCE = 5.0 V)

hFE

75

—

1000

—

Collector–Emitter Saturation Voltage

(IC = 30 Adc, IB = 1.2 Adc)

(IC = 60 Adc, IB = 4.0 Adc)

(IC = 30 Adc, IB = 1.2 Adc, TC = 100_C)

VCE(sat)

—

—

—

—

—

—

2.2

4.0

2.4

Vdc

Base–Emitter Saturation Voltage

(IC = 30 Adc, IB = 1.2 Adc)

(IC = 30 Adc, IB = 1.2 Adc, TC = 100_C)

VBE(sat)

—

—

—

—

3.0

3.5

Vdc

Diode Forward Voltage

(IF = 30 Adc)

Vf

—

2.5

5.0

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)

Cob

175

—

700

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

(VCC = 175 Vdc, IC = 30 A,

IB1 =

Adc, VBE(off) = 5.0 V, tp = 25 µs

Duty Cycle

v 2.0%).

td

—

0.02

0.2

µs

Rise Time

(VCC = 175 Vdc, IC = 30 A,

IB1 =

Adc, VBE(off) = 5.0 V, tp = 25 µs

Duty Cycle

v 2.0%).

tr

—

0.30

1.0

µs

Storage Time

IB1 =

Adc, VBE(off) = 5.0 V, tp = 25 µs

Duty Cycle

v 2.0%).

ts

—

1.0

3.5

µs

Fall Time

v 2.0%).

tf

—

0.07

0.5

µs

Inductive Load, Clamped (Table 1)

Storage Time

ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A,

VBE(off) = 5 V, TC = 100°C)

tsv

—

1.2

3.5

µs

Crossover Time

ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A,

VBE(off) = 5 V, TC = 100°C)

tc

—

0.45

2.0

µs

Storage Time

(ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A,

VBE(off) = 5 V, TC = 25°C)

tsv

—

0.75

—

µs

Crossover Time

(ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A,

VBE(off) = 5 V, TC = 25°C)

tc

—

0.25

—

µs

Fall Time

VBE(off) = 5 V, TC = 25°C)

tfi

—

0.15

—

µs

(1) Pulse Test: PW = 300

µs, Duty Cycle v 2%.