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TIP120 Datasheet(PDF) 1 Page - First Silicon Co., Ltd

Part No. TIP120
Description  Darlington TRANSISTOR (NPN)
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Maker  FS [First Silicon Co., Ltd]
Homepage  http://www.firstsilicon.co.kr/
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TIP120 Datasheet(HTML) 1 Page - First Silicon Co., Ltd

   
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2011. 10. 14
1/2
Revision No : 0
SEMICONDUCTOR
TECHNICAL DATA
TIP120,121,122
TIP125,126,127
TIP120,121,122
Darlington TRANSISTOR
(NPN)
TIP125,126,127 Darlington TRANSISTOR (PNP)
FEATURES
Medium Power Complementary silicon transistors
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Symbol
Parameter
TIP120
TIP125
TIP121
TIP126
TIP122
TIP127
Units
VCBO
Collector-Base Voltage
60
80
100
V
VCEO
Collector-Emitter Voltage
60
80
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
5
A
PC
Collector Power Dissipation
2
W
RθJA
Thermal Resistance Junction to Ambient
62.5
℃/W
RθJc
Thermal Resistance Junction to Case
1.92
℃/W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55to+150
ELECTRICAL CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
V(BR)CBO
IC= 1mA,IE=0
60
80
100
V
Collector-emitter breakdown voltage
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
VCEO(SUS)
IC= 30mA,IB=0
60
80
100
V
Collector cut-off current
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
ICBO
VCB= 60 V, IE=0
VCB= 80 V, IE=0
VCB= 100V, IE=0
0.2
mA
Collector cut-off current
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
ICEO
VCE=30 V, IB=0
VCE=40 V, IB=0
VCE=50 V, IB=0
0.5
mA
Emitter cut-off current
IEBO
VEB=5 V, IC=0
2
mA
hFE(1)
VCE= 3V, IC=0.5A
1000
DC current gain
hFE(2)
VCE= 3V, IC=3 A
1000
Collector-emitter saturation voltage
VCE(sat)
IC=3A,IB=12mA
IC=5 A,IB=20mA
2
4
V
Base-emitter voltage
VBE
VCE=3V, IC=3 A
2.5
V
Output Capacitance
TIP125,TIP126,TIP127
TIP120,TIP121,TIP122
Cob
VCB=10V, IE=0,f=0.1MHz
300
200
pF
TO-220
1.BASE
2.COLLECTOR
3.EMITTER


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