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MJD122I Datasheet(PDF) 1 Page - First Silicon Co., Ltd

Part No. MJD122I
Description  NPN Silicon Darlington Transistor
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Maker  FS [First Silicon Co., Ltd]
Homepage  http://www.firstsilicon.co.kr/
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MJD122I Datasheet(HTML) 1 Page - First Silicon Co., Ltd

   
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2012. 10. 14
1/2
Revision No : 0
SEMICONDUCTOR
TECHNICAL DATA
MJD122I
MJD122I
FEATURES
∙ High DC Current Gain
∙ Electrically Similar to Popular TIP122
∙ Built-in a Damper Diode at E-C
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
e
u
l
a
V
r
e
t
e
m
a
r
a
P
l
o
b
m
y
S
Unit
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
V
5
e
g
a
t
l
o
V
e
s
a
B
-
r
e
t
t
i
m
E
IC
Collector Current -Continuous
8
A
PC
W
5
.
1
n
o
i
t
a
p
i
s
s
i
D
r
o
t
c
e
ll
o
C
TJ, Tstg
Junction and Storage Te
0
5
1
-
5
5
-
e
r
u
t
a
r
e
p
m
ELECTRICAL CHARACTERISTICS (Ta=25
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=
1mA,IE=0
100
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=
30mA,IB=0
100
V
Emitter-base breakdown voltage
V(BR)EBO
IE=3mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=100V,IE=0
10
µA
Collector-emitter cut-off current
ICEO
VCE=50V,IE=0
10
µA
Emitter cut-off current
IEBO
VEB=5V,IC=0
2
mA
hFE(2)
VCE=4V,IC=4A
1000
12000
DC current gain
hFE(3)
VCE=4V,IC=8A
100
VCE(sat)1IC=4A,IB=16mA
2
V
Collector-emitter saturation voltage
VCE(sat)2IC=8A,IB=80mA
4
V
Base-emitter saturation voltage
VBE(sat)
IC=8A,IB=80mA
4.5
V
Base-emitter voltage*
VBE
VCE=4V,IC=4A
2.8
V
Collector output capacitance
Cob
VCB=10V,IE=0,f=0.1MHz
200
pF
TO-251-3L
1.
BASE
2.
COLLECTOR
3.
EMITTER
NPN Silicon Darlington Transistor
Equivalent Circuit
B
E
C
R1
R2
R1
8k
R2
0.12k
We declare that the material of
product compliance with RoHS requirements.


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