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BUY57 Datasheet(PDF) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

Part No. BUY57
Description  SPTECH Silicon NPN Power Transistor
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Maker  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
Homepage  http://www.superic-tech.com/
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BUY57 Datasheet(HTML) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

   
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
2
SPTECH Silicon NPN Power Transistor
BUY57
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA; IB= 0
125
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 10A; IB= 1.25A
1.3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 10A; IB= 1.25A
1.5
V
VBE(on)-1
Base-Emitter On Voltage
IC= 10A; VCE= 1.5V
1.5
V
VBE(on)-2
Base-Emitter On Voltage
IC= 12A; VCE= 1.5V
1.7
V
VBE(on)-2
Base-Emitter On Voltage
IC= 1A; VCE= 1.5V
1.0
V
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
VCB= 150V; IE= 0; TC= 125℃
1.0
10
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 1.5V
20
hFE-2
DC Current Gain
IC= 10A; VCE= 1.5V
12
hFE-3
DC Current Gain
IC= 12A; VCE= 1.5V
10
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
20
MHz
COB
Collector Output Capacitance
IE= 0; VCB= 10V, f= 1MHz
330
pF
Switching Times
ton
Turn-On Time
IC= 10A; IB1= -IB2= 1A; VCC= 60V;
tp= 10μs
1.0
μ
s
ts
Storage Time
1.6
μ
s
tf
Fall Time
0.6
μ
s


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