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TLE75620-EST Datasheet(PDF) 34 Page - Infineon Technologies AG |
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TLE75620-EST Datasheet(HTML) 34 Page - Infineon Technologies AG |
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34 / 81 page  Datasheet 34 Rev. 1.0 2017-11-23 TLE75620-EST SPIDER+ 12V Power Stages 7 Power Stages The TLE75620-EST is an eight channels configurable and high-side relay switch. The power stages are built by N-channel lateral power MOSFET transistors. There are six auto-configurable channels which can be used either as low-side or as high-side switches. They adjust the diagnostic and protective functions according their potential at drain and source automatically. For these channels a charge pump is connected to the output MOSFET gate. In high-side configuration, the load is connected between ground and source of the power transistor (pins OUTn_S, n = 2...7). The drains of the power transistors (OUTn_D, with “n” equal to the configurable channel number) can be connected to any potential between ground and VS. When the drain is connected to VS, the channel behave like an high-side switch. In low-side configuration, the source of the power transistors must be connected to GND pin potential (either directly or through a reverse current blocking diode). The configuration can be chosen for each of these channels individually, therefore it is feasible to connect one or more channels in low-side configuration, while the remaining auto-configurable are used as high-side switches. 7.1 Output ON-state resistance The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. 7.1.1 Switching Resistive Loads When switching resistive loads the following switching times and slew rates can be considered. Figure 16 Switching a Resistive Load 7.1.2 Inductive Output Clamp When switching off inductive loads, the voltage across the power switch rises to VDS(CL) potential, because the inductance intends to continue driving the current. The potential at Output pin is not allowed to go below VOUT_S(CL) or VOUT(CL). The voltage clamping is necessary to prevent device destruction. VDS t SwitchON .emf tON tOFF t 90% of VS dV / dtON 70% dV / dtOFF 30% tDELAY(ON) tDELAY(OFF) INn / OUT.OUTn 70% of VS 30% of VS 10% of VS |
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