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SI7923DN Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI7923DN Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package APPLICATIONS D Portable − Battery Switch − Load Switch RoHS COMPLIANT Si7923DN Vishay Siliconix New Product Document Number: 72622 S-51129—Rev. B, 13-Jun-05 www.vishay.com 1 Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) −30 0.047 @ VGS = −10 V −6.4 −30 0.075 @ VGS = −4.5 V −5 PowerPAK 1212-8 Bottom View 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D1 D1 D2 D2 3.30 mm 3.30 mm Ordering Information: Si7923DN-T1—E3 (Lead (Pb)-Free) S G D P-Channel MOSFET S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS −30 V Gate-Source Voltage VGS "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID −6.4 −4.3 Continuous Drain Current (TJ = 150_C)a TA = 85_C ID −4.6 −3.1 A Pulsed Drain Current IDM −20 A continuous Source Current (Diode Conduction)a IS −2.3 −1.1 Maximum Power Dissipationa TA = 25_C PD 2.8 1.3 W Maximum Power Dissipationa TA = 85_C PD 1.5 0.85 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C Soldering Recommendations (Peak Temperature)b,c 260 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 10 sec R 35 44 Maximum Junction-to-Ambienta Steady State RthJA 75 94 _C/W Maximum Junction-to-Case (Drain) Steady State RthJC 4 5 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. |
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