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3N163 Datasheet(PDF) 1 Page - Calogic, LLC |
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3N163 Datasheet(HTML) 1 Page - Calogic, LLC |
1 / 2 page P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch 3N163 / 3N164 FEATURES •• Very High Input Impedance •• High Gate Breakdown •• Fast Switching •• Low Capacitance ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25 oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V 3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V Static Gate-Source Voltage 3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V 3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Transient Gate-Source Voltage (Note 2) . . . . . . . . . . . . ±125V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65 oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55 oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300 oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above +25 oC . . . . . . . . . . . . . . . . . . . . . . 3.0mW/oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION Part Package Temperature Range 3N163-64 Hermetic TO-72 -55 oC to +150oC X3N163-64 Sorted Chips in Carriers -55 oC to +150oC CORPORATION PIN CONFIGURATION TO-72 G D C S 1503 ELECTRICAL CHARACTERISTICS (TA = 25 oC unless otherwise specified) SYMBOL PARAMETER 3N163 3N164 UNITS TEST CONDITIONS MIN MAX MIN MAX IGSS Gate-Body Leakage Current -10 -10 pA VGS = -40V, VDS = 0 (3N163) VGS = -30V, VDS = 0 (3N164) -25 -25 TA = +125 oC BVDSS Drain-Source Breakdown Voltage -40 -30 V ID = -10 µA, VGS = 0 BVSDS Source-Drain Breakdown Voltage -40 -30 IS = -10 µA, VGD = 0, VBD = 0 VGS(th) Threshold Voltage -2.0 -5.0 -2.0 -5.0 VDS = VGS, ID = -10 µA VGS(th) Threshold Voltage -2.0 -5.0 -2.0 -5.0 VDS = -15V, ID = -10 µA VGS Gate Source Voltage -2.5 -6.5 -2.5 -6.5 VDS = -15V, ID = -0.5mA IDSS Zero Gate Voltage Drain Current 200 400 pA VDS = -15V, VGS = 0 ISDS Source Drain Current 400 800 VSD = 15V, VGS = VDB = 0 rDS(on) Drain-Source on Resistance 250 300 ohms VGS = -20V, ID = -100 µA ID(on) On Drain Current -5.0 -30.0 -3.0 -30.0 mA VDS = +15V, VGS = -10V |
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