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MCR106 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MCR106
Description  Sensitive Gate Silicon Controlled Rectifiers
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MCR106 Datasheet(HTML) 2 Page - ON Semiconductor

  MCR106 Datasheet HTML 1Page - ON Semiconductor MCR106 Datasheet HTML 2Page - ON Semiconductor MCR106 Datasheet HTML 3Page - ON Semiconductor MCR106 Datasheet HTML 4Page - ON Semiconductor  
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MCR106−6, MCR106−8
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.0
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
75
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″ from Case for 10 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM; RGK = 1000 Ohms)
TJ = 25°C
TJ = 110°C
IDRM, IRRM
10
200
mA
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 3)
(ITM = 4 A Peak)
VTM
2.0
V
Gate Trigger Current (Continuous dc) (Note 4)
(VAK = 7 Vdc, RL = 100 Ohms)
(TC = −40°C)
IGT
200
500
mA
Gate Trigger Voltage (Continuous dc) (Note 4)
(VAK = 7 Vdc, RL = 100 Ohms)
VGT
1.0
V
Gate Non-Trigger Voltage (Note 4)
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 110°C)
VGD
0.2
V
Holding Current
(VAK = 7 Vdc, Initiating Current = 200 mA, Gate Open)
IH
5.0
mA
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off−State Voltage
(TJ = 110°C)
dv/dt
10
V/
ms
3. Pulse Test: Pulse Width
≤ 1.0 ms, Duty Cycle ≤ 1%.
4. RGK current is not included in measurement.
ORDERING INFORMATION
Device
Package
Shipping
MCR106−6
TO−225AA
500 Units / Box
MCR106−6G
TO−225AA
(Pb−Free)
500 Units / Box
MCR106−8
TO−225AA
500 Units / Box
MCR106−8G
TO−225AA
(Pb−Free)
500 Units / Box


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