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100N03 Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
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100N03 Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Transconductance Capacitance 0 15 30 45 60 75 90 0.0 0.5 1.0 1.5 2.0 2.5 VGS = 10 V thru 5 V VDS - Drain-to-Source Voltage (V) VGS = 2 V VGS = 3 V 0 100 200 300 400 500 600 0 1020 3040 5060 70 8090 ID - Drain Current (A) TC = - 55 °C TC = 25 °C TC = 125 °C 0 800 1600 2400 3200 4000 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Ciss Coss Crss Transfer Characteristics RDS(on) vs. Drain Current Gate Charge 0.0 0.6 1.2 1.8 2.4 3.0 012 34 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = - 55 °C TC = 125 °C 0.0020 0.0025 0.0030 0.0035 0.004 0.0045 0.0050 0 153045 607590 ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 0 2 4 6 8 10 0 306090 120 150 180 Qg - Total Gate Charge (nC) ID = 28.8 A VDS = 24 V VDS = 15 V 100N03 CMP100N03 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 3 |
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