10

© 1999 Silicon Storage Technology, Inc.

343-04 2/99

8 Megabit Multi-Purpose Flash

SST39VF800Q / SST39VF800

Advance Information

Symbol

Parameter

Min

Max

Units

Word Program time

20

µs

Address Setup Time

0

ns

Address Hold Time

30

ns

WE# and CE# Setup Time

0

ns

WE# and CE# Hold Time

0

ns

OE# High Setup Time

0

ns

OE# High Hold Time

10

ns

CE# Pulse Width

40

ns

WE# Pulse Width

40

ns

WE# Pulse Width High

30

ns

CE# Pulse Width High

30

ns

Data Setup Time

30

ns

Data Hold Time

0

ns

Software ID Access and Exit Time

150

ns

Sector Erase

25

ms

Block Erase

25

ms

Chip Erase

100

ms

Note 1: This parameter is measured only for initial qualification and after the design or process change that could affect this parameter.

343 PGM T14.1

AC CHARACTERISTICS

SST39VF800Q/VF800-70 SST39VF800Q/VF800-90

Symbol

Parameter

Min

Max

Min

Max

Units

Read Cycle time

70

90

ns

Chip Enable Access Time

70

90

ns

Address Access Time

70

90

ns

Output Enable Access Time

30

40

ns

CE# Low to Active Output

0

0

ns

OE# Low to Active Output

0

0

ns

CE# High to High-Z Output

20

30

ns

OE# High to High-Z Output

20

30

ns

Output Hold from Address Change

0

0

ns

343 PGM T13.0