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M45PE40-VMP6G Datasheet(PDF) 22 Page - STMicroelectronics

Part # M45PE40-VMP6G
Description  4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M45PE40-VMP6G Datasheet(HTML) 22 Page - STMicroelectronics

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Release from Deep Power-down (RDP)
Once the device has entered the Deep Power-
down mode, all instructions are ignored except the
Release from Deep Power-down (RDP) instruc-
tion. Executing this instruction takes the device out
of the Deep Power-down mode.
The Release from Deep Power-down (RDP) in-
struction is entered by driving Chip Select (S) Low,
followed by the instruction code on Serial Data In-
put (D). Chip Select (S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 18..
The Release from Deep Power-down (RDP) in-
struction is terminated by driving Chip Select (S)
High. Sending additional clock cycles on Serial
Clock (C), while Chip Select (S) is driven Low,
cause the instruction to be rejected, and not exe-
cuted.
After Chip Select (S) has been driven High, fol-
lowed by a delay, tRDP, the device is put in the
Standby Power mode. Chip Select (S) must re-
main High at least until this period is over. The de-
vice waits to be selected, so that it can receive,
decode and execute instructions.
Any Release from Deep Power-down (RDP) in-
struction, while an Erase, Program or Write cycle
is in progress, is rejected without having any ef-
fects on the cycle that is in progress.
Figure 18. Release from Deep Power-down (RDP) Instruction Sequence
C
D
AI06807
S
2
1
34567
0
tRDP
Standby Mode
Deep Power-down Mode
Q
High Impedance
Instruction


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