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M45PE40 Datasheet(PDF) 19 Page - STMicroelectronics

Part No. M45PE40
Description  4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com

M45PE40 Datasheet(HTML) 19 Page - STMicroelectronics

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Page Erase (PE)
The Page Erase (PE) instruction sets to 1 (FFh) all
bits inside the chosen page. Before it can be ac-
cepted, a Write Enable (WREN) instruction must
previously have been executed. After the Write
Enable (WREN) instruction has been decoded,
the device sets the Write Enable Latch (WEL).
The Page Erase (PE) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, and three address bytes on Serial
Data Input (D). Any address inside the Page is a
valid address for the Page Erase (PE) instruction.
Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in Figure 15..
Chip Select (S) must be driven High after the
eighth bit of the last address byte has been latched
in, otherwise the Page Erase (PE) instruction is
not executed. As soon as Chip Select (S) is driven
High, the self-timed Page Erase cycle (whose du-
ration is tPE) is initiated. While the Page Erase cy-
cle is in progress, the Status Register may be read
to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the
self-timed Page Erase cycle, and is 0 when it is
completed. At some unspecified time before the
cycle is complete, the Write Enable Latch (WEL)
bit is reset.
A Page Erase (PE) instruction applied to a page
that is Hardware Protected is not executed.
Any Page Erase (PE) instruction, while an Erase,
Program or Write cycle is in progress, is rejected
without having any effects on the cycle that is in
Figure 15. Page Erase (PE) Instruction Sequence
Note: Address bits A23 to A19 are Don’t Care.
24 Bit Address
29 30 31
23 22

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