V

BAT

VS

OUT

Load

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22

TPS274160

SLVSF05 – MAY 2020

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To protect the device, TI recommends two types of external circuitry.

•

Adding a blocking diode. Both the IC and load are protected when in reverse polarity.

Figure 18. Reverse-Current External Protection, Method 1

•

Adding a GND network. The reverse current through the device GND is blocked. The reverse current through

the FET is limited by the load itself. TI recommends a resistor in parallel with the diode as a GND network.

The recommended selection are 1-kΩ resistor in parallel with an >100-mA diode. If multiple high-side

switches are used, the resistor and diode can be shared among devices. The reverse current protection diode

in the GND network forward voltage should be less than 0.6 V in any circumstances. In addition a minimum

resistance of 4.7 K is recommended on the I/O pins.

Figure 19. Reverse-Current External Protection, Method 2

8.3.7.5 MCU I/O Protection

In some severe conditions, such as the high voltage transients or the loss of supply with inductive loads, a

negative pulse occurs on the GND pin This pulse can cause damage on the connected microcontroller. TI

recommends serial resistors to protect the microcontroller, for example, 4.7-kΩ when using a 3.3-V

microcontroller and 10-kΩ for a 5-V microcontroller.