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FM620-T Datasheet(PDF) 1 Page - Formosa MS

Part No. FM620-T
Description  Chip Schottky Barrier Diodes - Silicon epitaxial planer type
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Manufacturer  FORMOSA [Formosa MS]
Direct Link  http://www.formosams.com
Logo FORMOSA - Formosa MS

FM620-T Datasheet(HTML) 1 Page - Formosa MS

  FM620-T Datasheet HTML 1Page - Formosa MS FM620-T Datasheet HTML 2Page - Formosa MS  
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FM620-T THRU FM6100-T
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AB
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gr am
(V)
(V)
(V)
(V)
(
oC)
FM620-T
SS62
20
14
20
FM630-T
SS63
30
21
30
FM640-T
SS64
40
28
40
FM650-T
SS65
50
35
50
FM660-T
SS66
60
42
60
FM680-T
SS68
80
56
80
FM6100-T
S610
100
70
100
SYMBOLS
MARKING
CODE
0.55
-55 to +125
VRRM
*1
VRMS
*2
VR
*3
-55 to +150
0.70
0.85
Operating
temperature
VF
*4
MAXIMUM RATINGS (AT TA=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
IO
6.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
150
A
VR = VRRM TA =
25
oC
0.5
mA
VR = VRRM TA = 125
oC
50
mA
Thermal resistance
Junction to ambient
RqJA
15
oC / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
380
pF
Storage temperature
TSTG
-55
+150
oC
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.276(7.0)
0.260(6.6)
0.012(0.3) Typ.
0.189(4.8)
0.173(4.4)
0.244(6.2)
0.228(5.8)
0.087(2.2)
0.071(1.8)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMC-T
0.152(3.8)
0.144(3.6)
0.032(0.8) Typ.


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