SI9933CDY-T1-GE3 datasheet(1/9 Pages) VBSEMI

Part #	SI9933CDY-T1-GE3

Description	Dual P-Channel 30-V (D-S) MOSFET

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Manufacturer	VBSEMI [VBsemi Electronics Co.,Ltd]

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Dual P-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free

•TrenchFET® Power MOSFET

• 100 % UIS Tested

APPLICATIONS

•

Load Switches

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

d, e

Qg (Typ.)

- 30

0.02

9 at V

GS = - 10 V

-

7.3

1

7 nC

0.0

39 at V

GS = - 4.5 V

-

6.3

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 85 °C/W.

d. Based on TC = 25 °C.

e. Limited by package.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

-

7.3e

A

TC = 70 °C

-

7.0e

TA = 25 °C

- 7.3a, b

TA = 70 °C

- 5.9a, b

Pulsed Drain Current

IDM

- 32e

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 4.1

TA = 25 °C

- 2.0a, b

Avalanche Current

L = 0.1 mH

IAS

- 20

Single-Pulse Avalanche Energy

EAS

20

mJ

Maximum Power Dissipation

TC = 25 °C

PD

5.0

W

TC = 70 °C

3.2

TA = 25 °C

2.5a, b

TA = 70 °C

1.6a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c

t

≤ 10 s

RthJA

38

50

°C/W

Maximum Junction-to-Foot

Steady State

RthJF

20

25

S1

G1

D1

P-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

RoHS

COMPLIANT

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

SI9933CDY-T1-GE3

1

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