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D1030UK Datasheet(PDF) 1 Page - Seme LAB |
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D1030UK Datasheet(HTML) 1 Page - Seme LAB |
1 / 2 page DIM Millimetres Tol. Inches Tol. A 19.05 0.50 0.75 0.020 B 10.77 0.13 0.424 0.005 C 45° 5° 45° 5° D 9.78 0.13 0.385 0.005 E 5.71 0.13 0.225 0.005 F 27.94 0.13 1.100 0.005 G 1.52R 0.13 0.060R 0.005 H 10.16 0.13 0.400 0.005 I 22.22 MAX 0.875 MAX J 0.13 0.02 0.005 0.001 K 2.72 0.13 0.107 0.005 M 1.70 0.13 0.067 0.005 N 5.08 0.50 0.200 0.020 O 34.03 0.13 1.340 0.005 P 1.61R 0.08 0.064R 0.003 D1030UK Document Number 5310 Issue 1 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. PD Power Dissipation BVDSS Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 500W 70V ±20V 40A –65 to 150°C 200°C MECHANICAL DATA M K J I O N A C (2 pls) D F E (4 pls) B G (typ) P (2 pls) 1 5 4 3 2 H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS •LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM DR PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 PIN 3 DRAIN 2 PIN 4 GATE 2 PIN 5 GATE 1 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz METAL GATE RF SILICON FET TetraFET |
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