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HM5118165 Datasheet(PDF) 10 Page - Hitachi Semiconductor |
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HM5118165 Datasheet(HTML) 10 Page - Hitachi Semiconductor |
10 / 33 page HM5118165 Series 10 Write Cycle HM5118165 -5 -6 -7 Parameter Symbol Min Max Min Max Min Max Unit Notes Write command setup time t WCS 0 — 0 — 0 — ns 14, 21 Write command hold time t WCH 7 — 10 — 13 — ns 21 Write command pulse width t WP 7 — 10 — 10 — ns Write command to RAS lead time t RWL 7 — 10 — 13 — ns Write command to CAS lead time t CWL 7 — 10 — 13 — ns 23 Data-in setup time t DS 0 — 0 — 0 — ns 15, 23 Data-in hold time t DH 7 — 10 — 13 — ns 15, 23 Read-Modify-Write Cycle -5 -6 -7 Parameter Symbol Min Max Min Max Min Max Unit Notes Read-modify-write cycle time t RWC 111 — 135 — 161 — ns RAS to WE delay time t RWD 67 — 79 — 92 — ns 14 CAS to WE delay time t CWD 30 — 34 — 40 — ns 14 Column address to WE delay time t AWD 42 — 49 — 57 — ns 14 OE hold time from WE t OEH 13 — 15 — 18 — ns Refresh Cycle HM5118165 -5 -6 -7 Parameter Symbol Min Max Min Max Min Max Unit Notes CAS setup time (CBR refresh cycle) t CSR 5— 5— 5— ns 21 CAS hold time (CBR refresh cycle) t CHR 7 — 10 — 10 — ns 22 RAS precharge to CAS hold time t RPC 5— 5— 5— ns 21 |
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