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HM5118165 Datasheet(PDF) 6 Page - Hitachi Semiconductor

Part No. HM5118165
Description  16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
Download  33 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

HM5118165 Datasheet(HTML) 6 Page - Hitachi Semiconductor

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HM5118165 Series
6
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
SS
V
T
–1.0 to +7.0
V
Supply voltage relative to V
SS
V
CC
–1.0 to +7.0
V
Short circuit output current
Iout
50
mA
Power dissipation
P
T
1.0
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Recommended DC Operating Conditions (Ta = 0 to +70
°C)
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Supply voltage
V
CC
4.5
5.0
5.5
V
1, 2
Input high voltage
V
IH
2.4
6.5
V
1
Input low voltage
V
IL
–1.0
0.8
V
1
Notes: 1. All voltage referred to V
SS
2. The supply voltage with all V
CC pins must be on the same level.
The supply voltage with all V
SS
pins must be on the same level.
DC Characteristics (Ta = 0 to +70
°C, V
CC = 5 V ± 10%, VSS = 0 V)
HM5118165
-5
-6
-7
Parameter
Symbol
Min Max Min Max Min Max Unit
Test conditions
Operating current*
1, *2
I
CC1
200 —
170 —
150 mA
t
RC = min
Standby current
I
CC2
2
2
2
mA
TTL interface
RAS, UCAS, LCAS = V
IH
Dout = High-Z
1
1
1
mA
CMOS interface
RAS, UCAS,
LCAS
≥ V
CC – 0.2 V
Dout = High-Z
Standby current
(L-version)
I
CC2
150 —
150 —
150
µA
CMOS interface
RAS, UCAS,
LCAS
≥ V
CC – 0.2 V
Dout = High-Z


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