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HS-26C32RH-T Datasheet(PDF) 3 Page - Intersil Corporation

Part No. HS-26C32RH-T
Description  Radiation Hardened Quad Differential Line Driver
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Maker  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
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HS-26C32RH-T Datasheet(HTML) 3 Page - Intersil Corporation

   
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All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Die Characteristics
DIE DIMENSIONS:
2140
µm x 3290µm x 533µm ±25.4µm
(85 x 130 x 21mils
±1mil)
METALLIZATION:
M1: Mo/Tiw
Thickness: 5800
Å
M2: Al/Si/Cu
Thickness: 10k
Å
±1kÅ
SUBSTRATE POTENTIAL:
Internally connected to VDD. May be left floating.
BACKSIDE FINISH:
Silicon
PASSIVATION:
Type: SiO2
Thickness: 8k
Å
±1kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm2
TRANSISTOR COUNT:
315
PROCESS:
Radiation Hardened CMOS, AVLSI
Metallization Mask Layout
HS-26C32RH
AIN
VDD
BIN
AIN (2)
AOUT (3)
ENAB (4)
COUT (5)
CIN (6)
(8)
(9)
(14) BIN
(13) BOUT
(12) ENAB
(11) DOUT
(10) DIN
(1)
(16)
(15)
(7)
CIN
GND
DIN
HS-26C32RH-T


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