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BF1207 Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. BF1207
Description  Dual N-channel dual gate MOSFET
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com

BF1207 Datasheet(HTML) 1 Page - NXP Semiconductors

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Product profile
1.1 General description
The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package.
1.2 Features
s Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with partly integrated bias
s Internal switch to save external components
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio
1.3 Applications
s Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 5 V supply voltage, such as digital and analog
television tuners and professional communication equipment
Dual N-channel dual gate MOSFET
Rev. 01 — 28 July 2005
Product data sheet
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

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