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BF1207 Datasheet(PDF) 6 Page - NXP Semiconductors

Part No. BF1207
Description  Dual N-channel dual gate MOSFET
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BF1207 Datasheet(HTML) 6 Page - NXP Semiconductors

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9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
6 of 22
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
8.
Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
[1]
For the MOSFET not in use: VG1-S(B) = 0 V; VDS(B) =0V.
[2]
Measured in Figure 29 test circuit.
Table 8:
Dynamic characteristics for amplifier A
Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 18 mA. [1]
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
yfs
forward transfer admittance
Tj =25 °C25
30
40
mS
Ciss(G1)
input capacitance at gate1
f = 100 MHz
-
2.2
2.7
pF
Ciss(G2)
input capacitance at gate2
f = 1 MHz
-
3.5
-
pF
Coss
output capacitance
f = 100 MHz
-
0.9
-
pF
Crss
reverse transfer capacitance
f = 100 MHz
-
20
-
fF
Gtr
power gain
BS =BS(opt); BL =BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
30
34
38
dB
f = 400 MHz; GS = 2 mS; GL =1mS
26
30
34
dB
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
21
25
29
dB
NF
noise figure
f = 11 MHz; GS = 20 mS; BS = 0 S
-
3.0
-
dB
f = 400 MHz; YS =YS(opt)
-
1.3
-
dB
f = 800 MHz; YS =YS(opt)
-
1.4
-
dB
Xmod
cross-modulation
input level for k = 1 %; fw = 50 MHz;
funw =60MHz
[2]
at 0 dB AGC
90
-
-
dB
µV
at 10 dB AGC
-
90
-
dB
µV
at 20 dB AGC
-
99
-
dB
µV
at 40 dB AGC
100
105
-
dB
µV


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