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BF1207 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BF1207
Description  Dual N-channel dual gate MOSFET
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BF1207 Datasheet(HTML) 4 Page - NXP Semiconductors

 
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9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
4 of 22
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
6.
Thermal characteristics
7.
Static characteristics
Fig 1.
Power derating curve
Tsp (°C)
0
200
150
50
100
001aac741
100
150
50
200
250
Ptot
(mW)
0
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-sp)
thermal resistance from junction
to soldering point
240
K/W
Table 7:
Static characteristics
Tj =25 °C.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Per MOSFET; unless otherwise specified
V(BR)DSS
drain-source breakdown voltage
VG1-S =VG2-S =0V; ID =10 µA
amplifier A
6
-
-
V
amplifier B
6
-
-
V
V(BR)G1-SS
gate1-source breakdown voltage
VGS =VDS =0V; IG1-S =10mA
6
-
10
V
V(BR)G2-SS
gate2-source breakdown voltage
VGS =VDS =0V; IG2-S =10mA
6
-
10
V
VF(S-G1)
forward source-gate1 voltage
VG2-S =VDS =0V; IS-G1 = 10 mA
0.5
-
1.5
V
VF(S-G2)
forward source-gate2 voltage
VG1-S =VDS =0V; IS-G2 = 10 mA
0.5
-
1.5
V
VG1-S(th)
gate1-source threshold voltage
VDS =5V; VG2-S =4V; ID = 100 µA
0.3
-
1.0
V
VG2-S(th)
gate2-source threshold voltage
VDS =5V; VG1-S =5V; ID = 100 µA
0.4
-
1.0
V
IDSX
drain-source current
VG2-S =4V; VDS =5V; RG1 =68kΩ
amplifier A
[1] 13
-
23
mA
amplifier B
[2] 9
-
19
mA


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