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PESD15VL2BT Datasheet(PDF) 7 Page - NXP Semiconductors |
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PESD15VL2BT Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 14 page 9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 1 November 2005 7 of 14 Philips Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 Tamb =25 °C (1) PESD3V3L2BT and PESD5V0L2BT (2) PESD12VL2BT, PESD15VL2BT, PESD24VL2BT Fig 3. Peak pulse power as a function of exponential pulse duration tp; typical values Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values Tamb =25 °C; f = 1 MHz (1) PESD3V3L2BT (2) PESD5V0L2BT Tamb =25 °C; f = 1 MHz (1) PESD12VL2BT (2) PESD15VL2BT (3) PESD24VL2BT Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Diode capacitance as a function of reverse voltage; typical values 006aaa531 103 102 104 PPP (W) 10 tp (µs) 1104 103 10 102 (1) (2) Tj (°C) 0 200 150 50 100 001aaa193 0.4 0.8 1.2 PPP 0 PPP(25 °C) VR (V) 05 4 23 1 006aaa067 70 90 100 110 Cd (pF) 50 60 80 (1) (2) VR (V) 025 20 10 15 5 006aaa068 8 12 4 16 20 Cd (pF) 0 (1) (2) (3) |
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