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STD60NH03L-1 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STD60NH03L-1
Description  N-CHANNEL 30V - 0.0075 W - 60A DPAK/IPAK STripFET III POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD60NH03L-1 Datasheet(HTML) 3 Page - STMicroelectronics

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STD60NH03L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1) Pulse width limited by safe operating area
(3) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Starting Tj = 25 oC, ID = 30A, VDD = 20V
(4) Gate charge for synchronous operation . See Appendix A
.
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
ID = 30 A
RG = 4.7 Ω
VGS = 5 V
(Resistive Load, Figure 3)
21
95
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 15 V ID= 60 A VGS= 5 V
15.7
8.3
3.4
21
nC
nC
nC
Qgls(4)
Third-quadrant Gate Charge
VDS< 0 V
VGS= 10 V
15
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 15 V
ID = 30 A
RG = 4.7Ω,
VGS = 5 V
(Resistive Load, Figure 3)
19
15
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
VSD
Forward On Voltage
ISD = 30 A
VGS = 0
1.4
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 60 A
di/dt = 100A/µs
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
32
51
3.2
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance


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