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FSES0765RG Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FSES0765RG Datasheet(HTML) 4 Page - Fairchild Semiconductor |
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4 / 18 page 
FSES0765RG 4 Absolute Maximum Ratings (Ta=25 °C, unless otherwise specified) Notes: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. Lm=21mH, Vdd=50V, Rg=25 Ω, starting Tj=25°C 3. 60Hz AC Parameter Symbol Value Unit Drain Voltage VDS 650 V Vstr Voltage Vstr 650 V Drain Current Pulsed(1) IDM 15 A Continuous Drain Current (Tc = 25°C, with infinite heat sink) ID 7A Continuous Drain Current (Tc=100°C, with infinite heat sink) ID 4.5 A Single pulsed Avalanche Energy (2) EAS 570 mJ Supply Voltage VCC 20 V Analog Input Voltage Range Vsync -0.3 to 13 V VFB -0.3 to 10 V Total Power Dissipation (Tc = 25°C , with infinite heat sink) PD 145 W Operating Junction Temperature TJ +150 °C Operating Ambient Temperature TA -25 to +85 °C Storage Temperature Range TSTG -55 to +150 °C Thermal Resistance Rthjc 0.86 °C/W Drain to PKG Breakdown Voltage (3) BVpkg 3500 V ESD Capability, HBM Model (All pins except Vstr and Vfb) - 2.0 kV ESD Capability, Machine Model (All pins except Vstr and Vfb) - 300 V |
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