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FSDM1265RB Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FSDM1265RB Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 / 20 page  FSDM1265RB 5 Electrical Characteristics (Ta = 25 °C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Sense FET SECTION Drain-source breakdown voltage BVDSS VGS = 0V, ID = 250 µA 650 - - V Zero gate voltage drain current IDSS VDS = 650V, VGS = 0V - - 500 µA VDS= 520V VGS = 0V, TC = 125 °C - - 500 µA Static drain source on resistance RDS(ON) VGS = 10V, ID = 2.5A - 0.75 0.9 Ω Output capacitance COSS VGS = 0V, VDS = 25V, f = 1MHz -78 - pF Turn-on delay time TD(ON) VDD= 325V, ID= 5A -42 - ns Rise time TR - 106 - Turn-off delay time TD(OFF) - 330 - Fall time TF -110 - CONTROL SECTION Initial frequency FOSC VFB = 3V 60 66 72 kHz Voltage stability FSTABLE 13V ≤ Vcc ≤ 18V 0 1 3 % Temperature stability (1) ∆FOSC -25 °C ≤ Ta ≤ 85°C0 ±5±10 % Maximum duty cycle DMAX -77 82 87 % Minimum duty cycle DMIN -- - 0 % Start threshold voltage VSTART VFB=GND 11 12 13 V Stop threshold voltage VSTOP VFB=GND 78 9V Feedback source current IFB VFB=GND 0.7 0.9 1.1 mA Soft-start time TS Vfb=3 - 10 15 ms Leading edge blanking time TLEB - - 250 - ns BURST MODE SECTION Burst mode voltages(1) VBURH Vcc=14V 0.3 0.38 0.46 V VBURL Vcc=14V 0.39 0.49 0.59 V |
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