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FSDM0465RB Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FSDM0465RB Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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FSDM0465RB 5 Electrical Characteristics (Ta = 25 °C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit SenseFET SECTION Drain Source Breakdown Voltage BVDSS VGS = 0V, ID = 250 µA 650 - - V Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V - - 250 µA VDS= 520V VGS = 0V, TC = 125 °C - - 250 µA Static Drain Source On Resistance (1) RDS(ON) VGS = 10V, ID = 2.5A - 2.2 2.6 Ω Output Capacitance COSS VGS = 0V, VDS = 25V, f = 1MHz -60 - pF Turn On Delay Time TD(ON) VDD= 325V, ID= 3.2A - 23 - ns Rise Time TR -20 - Turn Off Delay Time TD(OFF) -65 - Fall Time TF -27 - CONTROL SECTION Initial Frequency FOSC VFB = 3V 60 66 72 kHz Voltage Stability FSTABLE 13V ≤ Vcc ≤ 18V 0 1 3 % Temperature Stability (2) ∆FOSC -25 °C ≤ Ta ≤ 85°C0 ±5±10 % Maximum Duty Cycle DMAX -77 82 87 % Minimum Duty Cycle DMIN -- - 0 % Start Threshold Voltage VSTART VFB=GND 11 12 13 V Stop Threshold Voltage VSTOP VFB=GND 78 9V Feedback Source Current IFB VFB=GND 0.7 0.9 1.1 mA Soft-start Time TS Vfb=3 - 10 15 ms Leading Edge Blanking Time TLEB - - 250 - ns BURST MODE SECTION Burst Mode Voltages VBURH Vcc=14V - 0.7 - V VBURL Vcc=14V - 0.5 - V |
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