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FSDM0265RNB Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FSDM0265RNB Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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FSDM0265RNB 5 Electrical Characteristics (Ta = 25 °C unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300us, duty ≤ 2% 2. These parameters, although guaranteed, are tested in EDS (wafer test) process 3. These parameters, although guaranteed, are not 100% tested in production Parameter Symbol Condition Min. Typ. Max. Unit SENSE FET SECTION Zero-Gate-Voltage Drain Current IDSS VDS=650V, VGS=0V - - 50 µA VDS=520V, VGS=0V, TC=125°C - - 200 µA Drain-Source On-State Resistance(1) RDS(ON) VGS=10V, ID=0.5A - 5.0 6.0 Ω Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz - 550 - pF Output Capacitance COSS -38- pF Reverse Transfer Capacitance CRSS -17- pF Turn-On Delay Time td(on) VDS=325V, ID=1.0A -20- ns Rise Time tr - 15 - ns Turn-Off Delay Time td(off) -55- ns Fall Time tf -25- ns CONTROL SECTION Switching Frequency fOSC 61 67 73 KHz Switching Frequency Modulation ∆fMOD ±1.5 ±2.0 ±2.5 KHz Switching Frequency Variation(2) ∆fOSC -25 °C ≤ Ta ≤ 85°C - ±5 ±10 % Maximum Duty Cycle DMAX 62 67 72 % Minimum Duty Cycle DMIN 00 0 % UVLO Threshold Voltage VSTART VFB=GND 11 12 13 V VSTOP VFB=GND 7 8 9 V Feedback Source Current IFB VFB=GND 0.7 0.9 1.1 mA Internal Soft Start Time tS/S VFB=4V 10 15 20 ms BURST MODE SECTION Burst Mode Voltage VBURH - 0.4 0.5 0.6 V VBURL - 0.25 0.35 0.45 V PROTECTION SECTION Peak Current Limit ILIM Max. inductor current 1.3 1.5 1.7 A Current Limit Delay Time(3) tCLD - 500 - ns Thermal Shutdown Temperature TSD - 125 140 - °C Shutdown Feedback Voltage VSD 5.5 6.0 6.5 V Over Voltage Protection VOVP 18 19 - V Shutdown Delay Current IDELAY VFB=4V 3.5 5.0 6.5 µA Leading Edge Blanking Time tLEB 200 - - ns TOTAL DEVICE SECTION Operating Supply Current (control part only) IOP VCC=14V 1 3 5 mA Start-Up Charging Current ICH VCC=0V 0.7 0.85 1.0 mA Vstr Supply Voltage VSTR VCC=0V 35 - - V |
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