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FSDM0265RNB Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FSDM0265RNB Datasheet(HTML) 4 Page - Fairchild Semiconductor |
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FSDM0265RNB 4 Absolute Maximum Ratings (Ta=25 °C, unless otherwise specified) Note: 1. Repetitive rating: Pulse width is limited by maximum junction temperature 2. L = 51mH, starting Tj = 25 °C Thermal Impedance (Ta=25 °C, unless otherwise specified) Note: 1. Free standing with no heatsink; Without copper clad. / Measurement Condition : Just before junction temperature TJ enters into OTP. 2. Measured on the DRAIN pin close to plastic interface. 3. Measured on the PKG top surface. - all items are tested with the standards JESD 51-2 and 51-10 (DIP). Characteristic Symbol Value Unit Drain Pin Voltage VDRAIN 650 V Vstr Pin Voltage VSTR 650 V Drain Current Pulsed(1) IDM 8.0 A Single Pulsed Avalanche Energy(2) EAS 68 mJ Supply Voltage VCC 20 V Feedback Voltage Range VFB -0.3 to VCC V Total Power Dissipation PD 1.56 W Operating Junction Temperature TJ Internally limited °C Operating Ambient Temperature TA -25 to +85 °C Storage Temperature TSTG -55 to +150 °C Parameter Symbol Value Unit 8DIP Junction-to-Ambient Thermal(1) θJA 79.64 °C/W Junction-to-Case Thermal(2) θJC 18.20 °C/W Junction-to-Top Thermal(3) ψJT 34.30 °C/W |
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